The Hunt for High-k Gate Dielectrics: A Materials Perspective

As the semiconductor industry is now entering the Angstrom era, novel materials are the key to enabling continued scaling toward future device nodes. This presentation will give a historical perspective on the crucial role that materials discovery and development played in finding a high-k replacement for silicon dioxide as the gate dielectric in CMOS. Current and future challenges, as well as opportunities, for materials solutions will be highlighted for both Logic and Memory applications.